Semiconductor spintronics with Co2-Heusler compounds

نویسندگان

چکیده

Abstract Ferromagnetic Co 2 -Heusler compounds showing high spin polarization have been utilized as injectors and detectors for III–V Group-IV semiconductors. In this article, we first describe the progress in crystal growth of films on GaAs(001) Ge(111) by low-temperature molecular beam epitaxy. Next, some examples electrical injection from contacts into GaAs Ge through Schottky-tunnel barriers are introduced. Thanks to those efforts, it was found that useful realization injection, transport, detection at room temperature. However, achieve highly efficient is very important suppress interfacial out-diffusion or layer near heterojunction. Recent high-quality -Heusler/Ge heterojunctions has demonstrated two-terminal magnetoresistance ratios more than 0.1% temperature even semiconductor spintronic device structures. The approach using provides a powerful solution need simultaneous achievement low electric power source drain devices such MOSFET. Graphical abstract

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ژورنال

عنوان ژورنال: Mrs Bulletin

سال: 2022

ISSN: ['1938-1425', '0883-7694']

DOI: https://doi.org/10.1557/s43577-022-00351-0